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2N7000 N-Channel Enhancement Mode Field Effect Transistor

Rs. 8.00 Rs. 15.00

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Delivery Time:- 2-5 Days (Anywhere in India), 7-10 Days for remote location

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  • High Density Cell Design for Low RDS(ON)
  • Voltage Controlled Small Signal Switch
  • Rugged and Reliable
  • High Saturation Current Capability


These N-channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-cur-rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.

  • Shipping Time:- Our orders are shipped within 24 Hours. 
  • Delivery Time:- 2-5 Days (Anywhere in India), 7-10 Days for remote location
  • Shipping Partner:- Bluedart, Amazon Shipping, Ekart Logistics, Delhivery & India Post.
  • Replacement:- Damaged During Transit, Missing Parts Or Item Mismatch.
  • Return:- Item mismatch or parts missing etc.
  •  No return/Replacement will apply if the Product has been subject to misuse, static discharge, neglect, accident, modification, or has been soldered or altered in any way.
  • We accept no responsibility for improper installation of our products. Electrical polarity must be properly observed in hooking up electrical components.
2N7000 N-Channel Enhancement Mode Field Effect Transistor
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