2N7000D 2N7000 N-Channel Enhancement Mode Field Effect Transistor
Rs. 10.00
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Estimated time to pack : 15 Mins.
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High Density Cell Design for Low RDS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability
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These N-channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-cur-rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
- Shipping Time:- Our orders are shipped within 24 Hours.
- Delivery Time:- 2-5 Days (Anywhere in India), 7-10 Days for remote location
- Shipping Partner:- Bluedart, Amazon Shipping, Ekart Logistics, Delhivery & India Post.
- Replacement:- Damaged During Transit, Missing Parts Or Item Mismatch.
- Return:- Item mismatch or parts missing etc.
- No return/Replacement will apply if the Product has been subject to misuse, static discharge, neglect, accident, modification, or has been soldered or altered in any way.
- We accept no responsibility for improper installation of our products. Electrical polarity must be properly observed in hooking up electrical components.