2N2646 Unijunction Transistor UJT
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2N2646 Unijunction Transistor
The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.
Features of 2N2646 General Purpose Transistor:
- Emitter-Base Volt (Veb2): 30V.
- Emitter Current (Iem): 0.05A.
- Power Dissipation (Ptot): 300mW.
- Type: Unijunction.
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Notes:
1. Derate 3mW/°C increase in ambient temperature. The total power dissipation (available power to Emitter and Base-Tow) must be limited by the external circuitry.
2. Capacitor discharge - 10μF or less, 30V or less.
3. Intrinsic standoff ration is defined by the equation : Vp - Vf / Vb2b1 Where : Vp = Peak Point Emitter Voltage; Vb2b1 = Interbase ; Vf = Emitter to Base-one Junction Diode Drop (~0.45V @ 10μA)
4. Use pulse techniques : Pulse Width ~300μS, Duty Cycle % 2% to avoid internal heating due to interbase modulation which may result in erroneous readings.
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- Replacement:- Damaged During Transit, Missing Parts Or Item Mismatch.
- Return:- Item mismatch or parts missing etc.
- No return/Replacement will apply if the Product has been subject to misuse, static discharge, neglect, accident, modification, or has been soldered or altered in any way.
- We accept no responsibility for improper installation of our products. Electrical polarity must be properly observed in hooking up electrical components.