CL100S medium power silicon planer transistor

• CL100 NPN Medium Power Transistor
• Transistor Polarity: NPN
• Collector−Emitter Voltage: 50V
• Continuous Collector Current: 1A
• Emitter Base Voltage (VEBO): 5V
• Power Dissipation: 3Watt
• Operating Temperature Range: -55~175°C
• DC Current Gain: 20
• High Ruggedness

CL100 NPN Power Transistor TO-39 Package

Medium power silicon planar transistor, CL100 is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE. This Product Known as CL100, CL100 Medium Power Transistor, CL100 NPN Medium Power Transistor, CL100 Power Transistor, CL100 Transistor, Component, Medium Power Transistor, NPN Medium Power Transistor, Power Transistor, Transistor

Features/Specs:

• Transistor Polarity: NPN
• Collector−Emitter Voltage: 50V
• Continuous Collector Current: 1A
• Emitter Base Voltage (VEBO): 5V
• Power Dissipation: 3Watt
• Operating Temperature Range: -55~175°C
• DC Current Gain: 20
• High Ruggedness
• Simple drive requirements
• The high safe operating area
• For low distortion complementary designs
• Easy to carry and handle
• Package: TO-39 Metal

Package includes:

• 1 x CL100S NPN Power Transistor