BS170 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:-

• Low offset voltage

• Full-voltage operation

• Easily driven without buffer

• Low error voltage

• No high-temperature run-away

• Excellent thermal stability

Detailed Specifications:-

• Number of Channels    1 Channel
  
• Transistor Polarity    N-Channel
  
• Drain-Source Breakdown Voltage (Vds)    60V
  
• Continuous Drain Current (Id)    500mA
  
• Drain-Source Resistance (Rds On)    5Ohms
  
• Gate-Source Voltage (Vgs)    20V
  
• Configuration    Single
  
• Operating Temperature Range    -55 - 150°C
  
• Power Dissipation (Pd)    350mW